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Request a Quick Quote for 15-1326286-1 by Advanced Micro Devices Inc - NSN 5962-01-375-7492

Mfg Part Number : 15-1326286-1

Alternate P/N : 1513262861

Item Name : microcircuit memory microcircuit memory

CAGE Code : 34335

If you require the NSN part 15-1326286-1, manufactured by Advanced Micro Devices Inc having CAGE Code 34335 and categorized under FSC 5962 Microcircuits Electronic under NSN 5962013757492, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part 15-1326286-1 Microcircuit Memory and many more.

At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Advanced Micro Devices Inc. Obtain a quote now for 15-1326286-1. In any case if you don't find your required part submit our straight RFQ and get your part in on time.

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We offer a vast range of NSN 5962013757492 parts, including 15-1326286-1, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Advanced Micro Devices Inc and others. To speak with a dedicated account manager, just submit an RFQ for 15-1326286-1 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.

NSN Information for Part Number 15-1326286-1 with NSN 5962-01-375-7492, 5962013757492

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-375-7492

Item Description:

Microcircuit Memory

59620137574920NB
CIICHCCESDPMICCriticalityENAC
7BA0
Part NumberISCRNVCRNCCHCCMSDSSADC
15-1326286-1525

Characteristics Data of NSN 5962-01-375-7492, 5962013757492

MRCCriteriaCharacteristic
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYTESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORYADAUBODY HEIGHT0 200 INCHES MINIMUM AND 0 220 INCHES MAXIMUM
MEMORYAFGAOPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYAGAVEND ITEM IDENTIFICATIONHACRMPE REACT BASIC
MEMORYCQSJINCLOSURE MATERIALCERAMIC
MEMORYCQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORYCRTLCRITICALITY CODE JUSTIFICATIONFEAT
MEMORYCTQXCURRENT RATING PER CHARACTERISTIC5 00 MICROAMPERES MAXIMUM INPUT
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 6 VOLTS MINIMUM TOTAL SUPPLY AND 7 0 VOLTS MAXIMUM TOTAL SUPPLY
MEMORYCZERMEMORY DEVICE TYPEEPROM
MEMORYFEATSPECIAL FEATURESELECTROSTATIC DISCHARGE SENSHARDNESS CRITICAL ITEM SELECTED ITEM SELECTED FROM PN 5962-8961404MXX OR 5962-8961405MXXCAGE 67268
MEMORYADATBODY WIDTH0 585 INCHES MINIMUM AND 0 605 INCHES MAXIMUM
MEMORYCXCYPART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITPROM128K X 8 27C010 MICROCIRCUITMEMORY DIGITALCMOS 128K X 8-BIT UVEPROMMONOLITHIC SILICON
MEMORYCZEQTIME RATING PER CHACTERISTIC150 00 NANOSECONDS MINIMUM ACCESS AND 170 00 NANOSECONDS MAXIMUM ACCESS
MEMORYCZZZMEMORY CAPACITY128K X 8
MEMORYTTQYTERMINAL TYPE AND QUANTITY32 PRINTED CIRCUIT
MEMORYADAQBODY LENGTH1 660 INCHES MINIMUM AND 1 680 INCHES MAXIMUM
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING330 0 MILLIWATTS
MEMORYCBBLFEATURES PROVIDEDBURN IN MIL-STD-883 CLASS B AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND RADIATION HARDENED AND ULTRAVIOLET ERASABLE AND TESTED TO MIL-STD-883 AND SELECTED ITEM
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYNHCFNUCLEAR HARDNESS CRITICAL FEATUREHARDENED
MEMORYSPCLSPECIAL TEST FEATURESSELECTED AND TESTED FOR RADIATION HARDNESS

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