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Quality guaranteed We sell only warrantied and traceable partsIf you require the NSN part 1280PALC22V10-2, manufactured by Bae Systems Information And Electronic Systems Integration I having CAGE Code 72314 and categorized under FSC 5962 Microcircuits Electronic under NSN 5962013711421, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part 1280PALC22V10-2 Microcircuit Memory and many more.
At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Bae Systems Information And Electronic Systems Integration I. Obtain a quote now for 1280PALC22V10-2. In any case if you don't find your required part submit our straight RFQ and get your part in on time.
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We offer a vast range of NSN 5962013711421 parts, including 1280PALC22V10-2, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Bae Systems Information And Electronic Systems Integration I and others. To speak with a dedicated account manager, just submit an RFQ for 1280PALC22V10-2 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-371-1421 Item Description: Microcircuit Memory | 5962 | 013711421 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 1280palc22v10-2 | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC40 00 NANOSECONDS NOMINAL ACCESS |
| MEMORY | ZZZX | DEPARTURE FROM CITED DESIGNATORALTERED BY PROGRAMMINGTESTING & MARKING |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDCOMPATIBLE CMOS AND MONOLITHIC AND PROGRAMMED AND ULTRAVIOLET ERASABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM ABSOLUTE INPUT AND 7 0 VOLTS MAXIMUM ABSOLUTE INPUT |
| MEMORY | ZZZP | PURCHASE DESCRIPTION IDENTIFICATION72314-1280PALC22V10-2 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC16 00 MILLIAMPERES REVERSE CURRENT DC NOMINAL |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITMEMORYDIGITALCMOS UV ERASABLEPROGRAMMABLE ARRAY LOGICMONOLITHIC SILICON |
| MEMORY | CZES | HYBRID TECHNOLOGY TYPEMONOLITHIC |
| MEMORY | TEST | TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 2 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONCONVERTSIGNDA EI FSCM 72314 |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
| MEMORY | ZZZK | SPECIFICATIONSTANDARD DATA67268-5962-8753903LA GOVERNMENT STANDARD |
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