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Request a Quick Quote for 6011075 by Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems - NSN 5961-01-167-8940

If you require the NSN part 6011075, manufactured by Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems having CAGE Code 12436 and categorized under FSC 5961 Semiconductor Devices and Associated Hardware under NSN 5961011678940, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part 6011075 Transistor and many more.

At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems. Obtain a quote now for 6011075. In any case if you don't find your required part submit our straight RFQ and get your part in on time.

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We offer a vast range of NSN 5961011678940 parts, including 6011075, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems and others. To speak with a dedicated account manager, just submit an RFQ for 6011075 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.

NSN Information for Part Number 6011075 with NSN 5961-01-167-8940, 5961011678940

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5961-01-167-8940

Item Description:

Transistor

59610116789400NB
CIICHCCESDPMICCriticalityENAC
UBA
Part NumberISCRNVCRNCCHCCMSDSSADC
601107538E

Characteristics Data of NSN 5961-01-167-8940, 5961011678940

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALMETAL
ABHPOVERALL LENGTH0 210 INCHES MAXIMUM
ABJTTERMINAL LENGTH0 500 INCHES MINIMUM
ADAVOVERALL DIAMETER0 195 INCHES MAXIMUM
ALASINTERNAL CONFIGURATIONFIELD EFFECT
AXGYMOUNTING METHODTERMINAL
AYQSTERMINAL CIRCLE DIAMETER0 100 INCHES NOMINAL
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
CTMZSEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC15 0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 22 0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 30 0 MAXIMUM GATE TO SOURCE VOLTAGE
CTQXCURRENT RATING PER CHARACTERISTIC50 00 MILLIAMPERES MAXIMUM DRAIN CURRENT
CTRDPOWER RATING PER CHARACTERISTIC1 2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
TTQYTERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD

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