If you require the NSN part 6010445-001, manufactured by Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems having CAGE Code 12436 and categorized under FSC 5962 Microcircuits Electronic under NSN 5962011122727, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part 6010445-001 Microcircuit Memory and many more.
At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems. Obtain a quote now for 6010445-001. In any case if you don't find your required part submit our straight RFQ and get your part in on time.
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We offer a vast range of NSN 5962011122727 parts, including 6010445-001, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems and others. To speak with a dedicated account manager, just submit an RFQ for 6010445-001 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-112-2727 Item Description: Microcircuit Memory | 5962 | 011122727 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
6010445-001 | 1 | 8 | E |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 060 INCHES MINIMUM AND 1 110 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 380 INCHES MINIMUM AND 0 400 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 180 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND LOW POWER AND WDISABLE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN15 INPUT |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT81755-C10736 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY22 PRINTED CIRCUIT |
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