If you require the NSN part 333282-1, manufactured by Bae Systems Information And Electronic Systems Integration Inc having CAGE Code 80249 and categorized under FSC 5962 Microcircuits Electronic under NSN 5962012931162, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part 333282-1 Microcircuit Memory and many more.
At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Bae Systems Information And Electronic Systems Integration Inc. Obtain a quote now for 333282-1. In any case if you don't find your required part submit our straight RFQ and get your part in on time.
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We offer a vast range of NSN 5962012931162 parts, including 333282-1, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Bae Systems Information And Electronic Systems Integration Inc and others. To speak with a dedicated account manager, just submit an RFQ for 333282-1 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-293-1162 Item Description: Microcircuit Memory | 5962 | 012931162 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
333282-1 | 2 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 150 INCHES MINIMUM AND 1 290 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 480 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 085 INCHES MINIMUM AND 0 250 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE0 070 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDSCHOTTKY AND 3-STATE OUTPUT AND PROGRAMMABLE AND HERMETICALLY SEALED |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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