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Request a Quick Quote for 9966-CCYG by Bae Systems Operations Limited Dba Bae Systems Plc - NSN 5962-01-331-6045

Mfg Part Number : 9966-CCYG

Alternate P/N : 9966CCYG

Item Name : microcircuit memory microcircuit memory

CAGE Code : K0656

If you require the NSN part 9966-CCYG, manufactured by Bae Systems Operations Limited Dba Bae Systems Plc having CAGE Code K0656 and categorized under FSC 5962 Microcircuits Electronic under NSN 5962013316045, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part 9966-CCYG Microcircuit Memory and many more.

At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Bae Systems Operations Limited Dba Bae Systems Plc. Obtain a quote now for 9966-CCYG. In any case if you don't find your required part submit our straight RFQ and get your part in on time.

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We offer a vast range of NSN 5962013316045 parts, including 9966-CCYG, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Bae Systems Operations Limited Dba Bae Systems Plc and others. To speak with a dedicated account manager, just submit an RFQ for 9966-CCYG with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.

NSN Information for Part Number 9966-CCYG with NSN 5962-01-331-6045, 5962013316045

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-331-6045

Item Description:

Microcircuit Memory

59620133160450NB
CIICHCCESDPMICCriticalityENAC
7BA0
Part NumberISCRNVCRNCCHCCMSDSSADC
9966-Ccyg523

Characteristics Data of NSN 5962-01-331-6045, 5962013316045

MRCCriteriaCharacteristic
MEMORYADATBODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORYCQSJINCLOSURE MATERIALCERAMIC
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQZPINPUT CIRCUIT PATTERN6 INPUT
MEMORYCTFTCASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510
MEMORYAFJQSTORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZEQTIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORYABKWOVERALL HEIGHT0 400 INCHES MAXIMUM
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING739 0 MILLIWATTS
MEMORYAFGAOPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORYCQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MAXIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORYCZERMEMORY DEVICE TYPEROM
MEMORYADAQBODY LENGTH0 840 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM
MEMORYCBBLFEATURES PROVIDEDBIPOLAR AND SCHOTTKY AND PROGRAMMABLE AND MONOLITHIC AND 3-STATE OUTPUT AND HIGH IMPEDANCE
MEMORYTESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORYTTQYTERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT

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