If you require the NSN part A2X210M, manufactured by Fei Microwave Inc having CAGE Code 21847 and categorized under FSC 5961 Semiconductor Devices and Associated Hardware under NSN 5961012194517, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part A2X210M Semiconductor Devic and many more.
At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Fei Microwave Inc. Obtain a quote now for A2X210M. In any case if you don't find your required part submit our straight RFQ and get your part in on time.
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We offer a vast range of NSN 5961012194517 parts, including A2X210M, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Fei Microwave Inc and others. To speak with a dedicated account manager, just submit an RFQ for A2X210M with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-219-4517 Item Description: Semiconductor Devic | 5961 | 012194517 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | G | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
A2x210m | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | CERAMIC ALL SEMICONDUCTOR DEVICE DIODE |
ABHP | OVERALL LENGTH | 0.190 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.210 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
ADAV | OVERALL DIAMETER | 0.078 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.084 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
ASKA | COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
AXGY | MOUNTING METHOD | COMPRESSION ALL SEMICONDUCTOR DEVICE DIODE |
BBJD | FIELD FORCE EFFECT TYPE | ELECTROSTATIC CHARGE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 40.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE |
CTRD | POWER RATING PER CHARACTERISTIC | 110.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
PMLC | PRECIOUS MATERIAL AND LOCATION | CONTACT SURFACES PLATED GOLD |
TEST | TEST DATA DOCUMENT | 96214-775085 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 FERRULE ALL SEMICONDUCTOR DEVICE DIODE |
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