If you require the NSN part 3N187, manufactured by General Semiconductor Inc having CAGE Code 14936 and categorized under FSC 5961 Semiconductor Devices and Associated Hardware under NSN 5961004485113, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part 3N187 Transistor and many more.
At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like General Semiconductor Inc. Obtain a quote now for 3N187. In any case if you don't find your required part submit our straight RFQ and get your part in on time.
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We offer a vast range of NSN 5961004485113 parts, including 3N187, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as General Semiconductor Inc and others. To speak with a dedicated account manager, just submit an RFQ for 3N187 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-00-448-5113 Item Description: Transistor | 5961 | 004485113 | 0 | N | A | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | A | A | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
3n187 | 3 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72 |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | SOURCE |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -6.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 1.00 MILLIAMPERES MAXIMUM GATE 1 CURRENT AND 1.00 MILLIAMPERES MAXIMUM GATE 2 CURRENT AND 1.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 330.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE6201 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
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