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Request a Quick Quote for 15-1326285-1 by Gte Government Systems Corp - NSN 5962-01-372-1262

Mfg Part Number : 15-1326285-1

Alternate P/N : 1513262851

Item Name : microcircuit memory microcircuit memory

CAGE Code : 11293

If you require the NSN part 15-1326285-1, manufactured by Gte Government Systems Corp having CAGE Code 11293 and categorized under FSC 5962 Microcircuits Electronic under NSN 5962013721262, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part 15-1326285-1 Microcircuit Memory and many more.

At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Gte Government Systems Corp. Obtain a quote now for 15-1326285-1. In any case if you don't find your required part submit our straight RFQ and get your part in on time.

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We offer a vast range of NSN 5962013721262 parts, including 15-1326285-1, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Gte Government Systems Corp and others. To speak with a dedicated account manager, just submit an RFQ for 15-1326285-1 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.

NSN Information for Part Number 15-1326285-1 with NSN 5962-01-372-1262, 5962013721262

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-372-1262

Item Description:

Microcircuit Memory

59620137212620NB
CIICHCCESDPMICCriticalityENAC
7BA0
Part NumberISCRNVCRNCCHCCMSDSSADC
15-1326285-1223

Characteristics Data of NSN 5962-01-372-1262, 5962013721262

MRCCriteriaCharacteristic
AEHXMAXIMUM POWER DISSIPATION RATING1.0 WATTS
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
AGAVEND ITEM IDENTIFICATIONHAC/RMPE REAC E/I FSCM 11293
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONLEADED CHIP CARRIER
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CRTLCRITICALITY CODE JUSTIFICATIONFEAT
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUIT,SRAM,32K X 8(CY7C197)
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0.5 VOLTS MINIMUM INPUT AND 6.0 VOLTS MAXIMUM INPUT
CZEQTIME RATING PER CHACTERISTIC55.00 NANOSECONDS NOMINAL ACCESS
CZERMEMORY DEVICE TYPERAM
CZESHYBRID TECHNOLOGY TYPEMONOLITHIC
CZZZMEMORY CAPACITY128KX8
NHCFNUCLEAR HARDNESS CRITICAL FEATUREHARDENED
TESTTEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI
TTQYTERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT
ZZZKSPECIFICATION/STANDARD DATA67268-5962-8866203UA GOVERNMENT STANDARD
ZZZXDEPARTURE FROM CITED DESIGNATORMODIFIED FOR NUCLEAR HARDNESS IMPACT
CTFTCASE OUTLINE SOURCE AND DESIGNATORC-11 MIL-M-38510
CBBLFEATURES PROVIDEDRADIATION HARDENED AND ELECTROSTATIC SENSITIVE
CWSGTERMINAL SURFACE TREATMENTSOLDER
FEATSPECIAL FEATURESCBBL
ZZZPPURCHASE DESCRIPTION IDENTIFICATION11293-15-1326285-1

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