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Quality guaranteed We sell only warrantied and traceable partsIf you require the NSN part 6406641, manufactured by Honeywell Intl Inc having CAGE Code 19315 and categorized under FSC 5962 Microcircuits Electronic under NSN 5962011110905, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part 6406641 Microcircuit Memory and many more.
At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Honeywell Intl Inc. Obtain a quote now for 6406641. In any case if you don't find your required part submit our straight RFQ and get your part in on time.
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We offer a vast range of NSN 5962011110905 parts, including 6406641, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Honeywell Intl Inc and others. To speak with a dedicated account manager, just submit an RFQ for 6406641 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-111-0905 Item Description: Microcircuit Memory | 5962 | 011110905 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 6406641 | 5 | 1 | C | A |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 000 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 300 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 165 INCHES MINIMUM AND 0 210 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING800 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND WENABLE AND 3-STATE OUTPUT |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC40 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 40 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEPROM |
| MEMORY | TEST | TEST DATA DOCUMENT07187-4038322 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT |
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