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Request a Quick Quote for IRF632 by Infineon Technologies Americas Corp - NSN 5961-01-259-9609

Mfg Part Number : IRF632


Item Name : transistor transistor

CAGE Code : 81483

If you require the NSN part IRF632, manufactured by Infineon Technologies Americas Corp having CAGE Code 81483 and categorized under FSC 5961 Semiconductor Devices and Associated Hardware under NSN 5961012599609, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part IRF632 Transistor and many more.

At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Infineon Technologies Americas Corp. Obtain a quote now for IRF632. In any case if you don't find your required part submit our straight RFQ and get your part in on time.

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We offer a vast range of NSN 5961012599609 parts, including IRF632, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Infineon Technologies Americas Corp and others. To speak with a dedicated account manager, just submit an RFQ for IRF632 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.

NSN Information for Part Number IRF632 with NSN 5961-01-259-9609, 5961012599609

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5961-01-259-9609

Item Description:

Transistor

59610125996090NB
CIICHCCESDPMICCriticalityENAC
UBA
Part NumberISCRNVCRNCCHCCMSDSSADC
Irf632225

Characteristics Data of NSN 5961-01-259-9609, 5961012599609

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALPLASTIC
ABHPOVERALL LENGTH0.650 INCHES MAXIMUM
ABJTTERMINAL LENGTH0.580 INCHES MAXIMUM
ABKWOVERALL HEIGHT0.190 INCHES MAXIMUM
ABMKOVERALL WIDTH0.420 INCHES MAXIMUM
ALASINTERNAL CONFIGURATIONFIELD EFFECT
ALAZJOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-220
AXGYMOUNTING METHODTERMINAL
CBBLFEATURES PROVIDEDELECTROSTATIC SENSITIVE
CTMZIII SEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC200.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
CTQXCURRENT RATING PER CHARACTERISTIC12.00 AMPERES MAXIMUM DRAIN CURRENT
CTRDPOWER RATING PER CHARACTERISTIC75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS AMBIENT AIR
TTQYTERMINAL TYPE AND QUANTITY3 PIN

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