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Request a Quick Quote for IRF431 by Infineon Technologies Americas Corp - NSN 5961-01-364-9318

Mfg Part Number : IRF431


Item Name : transistor transistor

CAGE Code : 81483

If you require the NSN part IRF431, manufactured by Infineon Technologies Americas Corp having CAGE Code 81483 and categorized under FSC 5961 Semiconductor Devices and Associated Hardware under NSN 5961013649318, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part IRF431 Transistor and many more.

At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Infineon Technologies Americas Corp. Obtain a quote now for IRF431. In any case if you don't find your required part submit our straight RFQ and get your part in on time.

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We offer a vast range of NSN 5961013649318 parts, including IRF431, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Infineon Technologies Americas Corp and others. To speak with a dedicated account manager, just submit an RFQ for IRF431 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.

NSN Information for Part Number IRF431 with NSN 5961-01-364-9318, 5961013649318

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5961-01-364-9318

Item Description:

Transistor

59610136493180NB
CIICHCCESDPMICCriticalityENAC
UBA
Part NumberISCRNVCRNCCHCCMSDSSADC
Irf431525

Characteristics Data of NSN 5961-01-364-9318, 5961013649318

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALMETAL
ABHPOVERALL LENGTH1.500 INCHES NOMINAL
ABKWOVERALL HEIGHT0.350 INCHES NOMINAL
ABMKOVERALL WIDTH1.000 INCHES NOMINAL
AGAVIII END ITEM IDENTIFICATIONGENERAL PURPOSE ELECTRONIC TEST EQUIPMENT (GPETE).
AKPVMOUNTING FACILITY QUANTITY2
ALASINTERNAL CONFIGURATIONFIELD EFFECT
ALAZJOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONT0-3
AXGYMOUNTING METHODUNTHREADED HOLE
CTMZIII SEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC450.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 1.5 MINIMUM GATE TO SOURCE VOLTAGE AND 3.5 MAXIMUM GATE TO SOURCE VOLTAGE
TTQYTERMINAL TYPE AND QUANTITY2 PIN AND 1 CASE

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