If you require the NSN part IDT6116-S120CB, manufactured by Integrated Device Technology Inc having CAGE Code 61772 and categorized under FSC 5962 Microcircuits Electronic under NSN 5962011986086, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part IDT6116-S120CB Microcircuit Memory and many more.
At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Integrated Device Technology Inc. Obtain a quote now for IDT6116-S120CB. In any case if you don't find your required part submit our straight RFQ and get your part in on time.
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We offer a vast range of NSN 5962011986086 parts, including IDT6116-S120CB, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Integrated Device Technology Inc and others. To speak with a dedicated account manager, just submit an RFQ for IDT6116-S120CB with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-198-6086 Item Description: Microcircuit Memory | 5962 | 011986086 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Idt6116-S120cb | 5 | 1 | C | A |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.180 INCHES MINIMUM AND 1.220 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.120 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | STATIC OPERATION AND HIGH SPEED AND ASYNCHRONOUS AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 23 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | RAM |
FEAT | SPECIAL FEATURES | TTL COMPATIBLE |
TTQY | TERMINAL TYPE AND QUANTITY | 11 PRINTED CIRCUIT |
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