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Quality guaranteed We sell only warrantied and traceable partsIf you require the NSN part IDT6168SA35DB, manufactured by Integrated Device Technology Inc having CAGE Code 61772 and categorized under FSC 5962 Microcircuits Electronic under NSN 5962013547816, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part IDT6168SA35DB Microcircuit Memory and many more.
At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Integrated Device Technology Inc. Obtain a quote now for IDT6168SA35DB. In any case if you don't find your required part submit our straight RFQ and get your part in on time.
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We offer a vast range of NSN 5962013547816 parts, including IDT6168SA35DB, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Integrated Device Technology Inc and others. To speak with a dedicated account manager, just submit an RFQ for IDT6168SA35DB with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-354-7816 Item Description: Microcircuit Memory | 5962 | 013547816 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Idt6168sa35db | 5 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BURN IN AND BIPOLAR AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMED |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 18 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM ACCESS |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
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