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Quality guaranteed We sell only warrantied and traceable partsIf you require the NSN part 585R649H01, manufactured by Microsemi Corp having CAGE Code 43611 and categorized under FSC 5961 Semiconductor Devices and Associated Hardware under NSN 5961011379317, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part 585R649H01 Transistor and many more.
At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Microsemi Corp. Obtain a quote now for 585R649H01. In any case if you don't find your required part submit our straight RFQ and get your part in on time.
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We offer a vast range of NSN 5961011379317 parts, including 585R649H01, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Microsemi Corp and others. To speak with a dedicated account manager, just submit an RFQ for 585R649H01 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-137-9317 Item Description: Transistor | 5961 | 011379317 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 585r649h01 | 3 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 1.550 INCHES MAXIMUM |
| ABKW | OVERALL HEIGHT | 0.330 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 2 |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT-DARLINGTON CONNECTED |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PNP |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE |
| CBBL | FEATURES PROVIDED | BURN IN AND HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -120.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | -50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -2.00 AMPERES MAXIMUM BASE CURRENT, DC |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| FEAT | SPECIAL FEATURES | TRANSISTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
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