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Quality guaranteed We sell only warrantied and traceable partsIf you require the NSN part MM5381 1J 883B, manufactured by Mmi Amd having CAGE Code 50364 and categorized under FSC 5962 Microcircuits Electronic under NSN 5962011728646, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part MM5381 1J 883B Microcircuit Memory and many more.
At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Mmi Amd. Obtain a quote now for MM5381 1J 883B. In any case if you don't find your required part submit our straight RFQ and get your part in on time.
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We offer a vast range of NSN 5962011728646 parts, including MM5381 1J 883B, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Mmi Amd and others. To speak with a dedicated account manager, just submit an RFQ for MM5381 1J 883B with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-172-8646 Item Description: Microcircuit Memory | 5962 | 011728646 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| MM5381 1J 883B | 2 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.150 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.1 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND SCHOTTKY AND BIPOLAR AND PROGRAMMED AND 3-STATE OUTPUT AND HIGH IMPEDANCE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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