If you require the NSN part N82S123N, manufactured by Philips Semiconductors Ltd having CAGE Code 18324 and categorized under FSC 5962 Microcircuits Electronic under NSN 5962011196664, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part N82S123N Microcircuit Memory and many more.
At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Philips Semiconductors Ltd. Obtain a quote now for N82S123N. In any case if you don't find your required part submit our straight RFQ and get your part in on time.
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We offer a vast range of NSN 5962011196664 parts, including N82S123N, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Philips Semiconductors Ltd and others. To speak with a dedicated account manager, just submit an RFQ for N82S123N with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-119-6664 Item Description: Microcircuit Memory | 5962 | 011196664 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
N82s123n | C | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.745 INCHES MINIMUM AND 0.755 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 333.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | +0.0/+75.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | TS-3852 V2G E/I FSCM 80058 |
CBBL | FEATURES PROVIDED | MONOLITHIC AND BIPOLAR AND EXPANDABLE AND POSITIVE OUTPUTS AND W/ENABLE AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | PLASTIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
TEST | TEST DATA DOCUMENT | 50621-021-0005 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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