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Request a Quick Quote for P4C187-70CMB by Pyramid Semiconductor Corp - NSN 5962-01-283-4329

Mfg Part Number : P4C187-70CMB

Alternate P/N : P4C18770CMB

Item Name : microcircuit memory microcircuit memory

CAGE Code : 3DTT2

If you require the NSN part P4C187-70CMB, manufactured by Pyramid Semiconductor Corp having CAGE Code 3DTT2 and categorized under FSC 5962 Microcircuits Electronic under NSN 5962012834329, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part P4C187-70CMB Microcircuit Memory and many more.

At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Pyramid Semiconductor Corp. Obtain a quote now for P4C187-70CMB. In any case if you don't find your required part submit our straight RFQ and get your part in on time.

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We offer a vast range of NSN 5962012834329 parts, including P4C187-70CMB, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Pyramid Semiconductor Corp and others. To speak with a dedicated account manager, just submit an RFQ for P4C187-70CMB with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.

NSN Information for Part Number P4C187-70CMB with NSN 5962-01-283-4329, 5962012834329

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-283-4329

Item Description:

Microcircuit Memory

59620128343290ND
CIICHCCESDPMICCriticalityENAC
UDA0
Part NumberISCRNVCRNCCHCCMSDSSADC
P4c187-70cmb115

Characteristics Data of NSN 5962-01-283-4329, 5962012834329

MRCCriteriaCharacteristic
ADAQBODY LENGTH1.260 INCHES MAXIMUM
ADATBODY WIDTH0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
ADAUBODY HEIGHT0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
AEHXMAXIMUM POWER DISSIPATION RATING1.0 WATTS
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND 3-STATE OUTPUT
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CQZPINPUT CIRCUIT PATTERN19 INPUT
CTQXCURRENT RATING PER CHARACTERISTIC50.00 MILLIAMPERES NOMINAL OUTPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC7.0 VOLTS MAXIMUM POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
CZERMEMORY DEVICE TYPERAM
CZZZMEMORY CAPACITYUNKNOWN
TESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
TTQYTERMINAL TYPE AND QUANTITY22 PRINTED CIRCUIT

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