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Request a Quick Quote for 848274 1 by Raytheon Company - NSN 5961-01-364-1223

Mfg Part Number : 848274 1

Alternate P/N : 8482741

Manufacturer : Raytheon Company

Item Name : transistor transistor

CAGE Code : 54X10

If you require the NSN part 848274 1, manufactured by Raytheon Company having CAGE Code 54X10 and categorized under FSC 5961 Semiconductor Devices and Associated Hardware under NSN 5961013641223, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part 848274 1 Transistor and many more.

At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Raytheon Company. Obtain a quote now for 848274 1. In any case if you don't find your required part submit our straight RFQ and get your part in on time.

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We offer a vast range of NSN 5961013641223 parts, including 848274 1, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Raytheon Company and others. To speak with a dedicated account manager, just submit an RFQ for 848274 1 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.

NSN Information for Part Number 848274 1 with NSN 5961-01-364-1223, 5961013641223

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5961-01-364-1223

Item Description:

Transistor

59610136412230NB
CIICHCCESDPMICCriticalityENAC
UBA
Part NumberISCRNVCRNCCHCCMSDSSADC
848274 1525

Characteristics Data of NSN 5961-01-364-1223, 5961013641223

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALMETAL
ABHPOVERALL LENGTH0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
ADAVOVERALL DIAMETER0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
AFZCFUNCTION FOR WHICH DESIGNEDSWITCHING
AGAVEND ITEM IDENTIFICATIONRECEIVER
ALASINTERNAL CONFIGURATIONFIELD EFFECT
AXGYMOUNTING METHODTERMINAL
CTMZIII SEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC25.0 MAXIMUM ON-STATE DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 15.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
CTQXCURRENT RATING PER CHARACTERISTIC50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
TTQYTERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD

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