If you require the NSN part 4014666-385, manufactured by Raytheon Technical Services Company having CAGE Code 36378 and categorized under FSC 5962 Microcircuits Electronic under NSN 5962011226972, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part 4014666-385 Microcircuit Memory and many more.
At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Raytheon Technical Services Company. Obtain a quote now for 4014666-385. In any case if you don't find your required part submit our straight RFQ and get your part in on time.
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We offer a vast range of NSN 5962011226972 parts, including 4014666-385, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Raytheon Technical Services Company and others. To speak with a dedicated account manager, just submit an RFQ for 4014666-385 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-122-6972 Item Description: MICROCIRCUIT,MEMORY | 5962 | 011226972 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
4014666-385 | 3 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.925 INCHES UM |
ADAU | BODY HEIGHT | 0.175 INCHES UM |
AFGA | OPERATING TEMP RANGE | +0.0/+75.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT AND W/ENABLE |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS UM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | ROM |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
ADAT | BODY WIDTH | 0.302 INCHES UM |
AEHX | UM POWER DISSIPATION RATING | 409.6 MILLIWATTS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEQ | TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS UM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS UM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZZZ | MEMORY CAPACITY | UNKNOWN |
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