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Quality guaranteed We sell only warrantied and traceable partsIf you require the NSN part K6T1008C2EDB7000, manufactured by Samsung Semiconductor Inc having CAGE Code 0DUN9 and categorized under FSC 5962 Microcircuits Electronic under NSN 5962014082869, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part K6T1008C2EDB7000 Microcircuit Memory and many more.
At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Samsung Semiconductor Inc. Obtain a quote now for K6T1008C2EDB7000. In any case if you don't find your required part submit our straight RFQ and get your part in on time.
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We offer a vast range of NSN 5962014082869 parts, including K6T1008C2EDB7000, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Samsung Semiconductor Inc and others. To speak with a dedicated account manager, just submit an RFQ for K6T1008C2EDB7000 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-408-2869 Item Description: Microcircuit Memory | 5962 | 014082869 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | A | 0 | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| K6t1008c2edb7000 | 5 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | +0.0 TO 70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10) |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | PLASTIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS |
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