If you require the NSN part L128B2, manufactured by Siliconix Incorporated having CAGE Code 17856 and categorized under FSC 5962 Microcircuits Electronic under NSN 5962010378593, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part L128B2 Microcircuit Memory and many more.
At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Siliconix Incorporated. Obtain a quote now for L128B2. In any case if you don't find your required part submit our straight RFQ and get your part in on time.
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We offer a vast range of NSN 5962010378593 parts, including L128B2, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Siliconix Incorporated and others. To speak with a dedicated account manager, just submit an RFQ for L128B2 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-037-8593 Item Description: Microcircuit Memory | 5962 | 010378593 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | U | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
L128b2 | 5 | 1 | C | A |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.120 INCHES MINIMUM AND 0.160 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 625.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND 3-STATE OUTPUT AND W/ENABLE AND W/STORAGE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/DISABLE AND PROGRAMMABLE AND PROGRAMMED AND HIGH SPEED |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | -0-001-AE JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
TEST | TEST DATA DOCUMENT | 36659-13046426L DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DR |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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