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Request a Quick Quote for V11982 by Texas Instruments Incorporated - NSN 5961-01-369-7616

Mfg Part Number : V11982


Item Name : transistor transistor

CAGE Code : 01295

If you require the NSN part V11982, manufactured by Texas Instruments Incorporated having CAGE Code 01295 and categorized under FSC 5961 Semiconductor Devices and Associated Hardware under NSN 5961013697616, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part V11982 Transistor and many more.

At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Texas Instruments Incorporated. Obtain a quote now for V11982. In any case if you don't find your required part submit our straight RFQ and get your part in on time.

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We offer a vast range of NSN 5961013697616 parts, including V11982, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Texas Instruments Incorporated and others. To speak with a dedicated account manager, just submit an RFQ for V11982 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.

NSN Information for Part Number V11982 with NSN 5961-01-369-7616, 5961013697616

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5961-01-369-7616

Item Description:

Transistor

59610136976160NB
CIICHCCESDPMICCriticalityENAC
UBA
Part NumberISCRNVCRNCCHCCMSDSSADC
V11982595

Characteristics Data of NSN 5961-01-369-7616, 5961013697616

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALMETAL
ABHPOVERALL LENGTH0.250 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
ABJTTERMINAL LENGTH0.057 INCHES MINIMUM AND 0.063 INCHES MAXIMUM
ADAVOVERALL DIAMETER0.875 INCHES MAXIMUM
AKPVMOUNTING FACILITY QUANTITY2
ALASINTERNAL CONFIGURATIONFIELD EFFECT
AXGYMOUNTING METHODUNTHREADED HOLE
CTMZIII SEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
CTQXCURRENT RATING PER CHARACTERISTIC60.00 MILLIAMPERES NOMINAL DRAIN CURRENT
CTRDPOWER RATING PER CHARACTERISTIC150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS JUNCTION
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD

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