If you require the NSN part 99136643, manufactured by Thales Sa having CAGE Code F6481 and categorized under FSC 5961 Semiconductor Devices and Associated Hardware under NSN 5961012906650, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part 99136643 Transistor and many more.
At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Thales Sa. Obtain a quote now for 99136643. In any case if you don't find your required part submit our straight RFQ and get your part in on time.
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We offer a vast range of NSN 5961012906650 parts, including 99136643, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Thales Sa and others. To speak with a dedicated account manager, just submit an RFQ for 99136643 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-290-6650 Item Description: Transistor | 5961 | 012906650 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
99136643 | 2 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | PLASTIC |
ABHP | OVERALL LENGTH | 0.650 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.580 INCHES MAXIMUM |
ABKW | OVERALL HEIGHT | 0.190 INCHES MAXIMUM |
ABMK | OVERALL WIDTH | 0.420 INCHES MAXIMUM |
AKPV | MOUNTING FACILITY QUANTITY | 1 |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
AXGY | MOUNTING METHOD | TERMINAL AND UNTHREADED HOLE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 72.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK |
CTRD | POWER RATING PER CHARACTERISTIC | 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 PIN |
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