If you require the NSN part 115721-0001, manufactured by Thales Usa Inc having CAGE Code 65597 and categorized under FSC 5962 Microcircuits Electronic under NSN 5962013333430, then look no further than NSN Gamut. Our company, which is owned and managed by ASAP Semiconductor, a distributor in the aerospace and defense industry, has an inventory of over two billion new and obsolete NSN parts, including part 115721-0001 Microcircuit Memory and many more.
At NSN Gamut, we have a strict policy of not sourcing from China, ensuring that all parts you buy from us are completely traceable or sourced directly from reputable manufacturers like Thales Usa Inc. Obtain a quote now for 115721-0001. In any case if you don't find your required part submit our straight RFQ and get your part in on time.
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We offer a vast range of NSN 5962013333430 parts, including 115721-0001, with quick lead times and competitive prices. NSN Gamut has a large selection of in-demand parts from manufacturers such as Thales Usa Inc and others. To speak with a dedicated account manager, just submit an RFQ for 115721-0001 with your basic details like your company name parts quantity required, and get your quote in 15 minutes or less.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-333-3430 Item Description: Microcircuit Memory | 5962 | 013333430 | 0 | N | D | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | D | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
115721-0001 | 5 | 1 | C | A |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-10 MIL-M-38510 |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC60 00 MILLIAMPERES MAXIMUM SUPPLY |
MEMORY | ABKW | OVERALL HEIGHT0 357 INCHES MINIMUM AND 0 432 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 172 INCHES MINIMUM AND 0 217 INCHES MAXIMUM |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS NOMINAL POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPEEPROM |
MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
MEMORY | ADAQ | BODY LENGTH1 490 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING350 0 MILLIWATTS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE |
MEMORY | CQZP | INPUT CIRCUIT PATTERN26 INPUT |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
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